Developing boron nitride toward deep ultraviolet optoelectronic apps
July 16, 2014
By: Semiconductor Today
Semiconductor Today - Professors Hongxing Jiang and Jingyu Lin at Texas Tech University
believe that using boron nitride as the p-type contact layers in nitride semiconductor
heterostructures “could ultimately pave the way toward the realization of high-efficiency
nitride deep ultraviolet (DUV) optoelectronic devices” [Semicond. Sci. Technol., vol29,
p084003, 2014].
Professors Hongxing Jiang and Jingyu Lin at Texas Tech University believe that using
boron nitride as the p-type contact layers in nitride semiconductor heterostructures
“could ultimately pave the way toward the realization of high-efficiency nitride deep
ultraviolet (DUV) optoelectronic devices” [Semicond. Sci. Technol., vol29, p084003,
2014].
Read the rest of the story at Semiconductor Today