Developing boron nitride toward deep ultraviolet optoelectronic apps
July 16, 2014
Semiconductor Today - Professors Hongxing Jiang and Jingyu Lin at Texas Tech University believe that using boron nitride as the p-type contact layers in nitride semiconductor heterostructures “could ultimately pave the way toward the realization of high-efficiency nitride deep ultraviolet (DUV) optoelectronic devices” [Semicond. Sci. Technol., vol29, p084003, 2014].
Professors Hongxing Jiang and Jingyu Lin at Texas Tech University believe that using boron nitride as the p-type contact layers in nitride semiconductor heterostructures “could ultimately pave the way toward the realization of high-efficiency nitride deep ultraviolet (DUV) optoelectronic devices” [Semicond. Sci. Technol., vol29, p084003, 2014].